Contact
How to shop
Delivery
Shopping guide
InGaN solar cells
Molecular beam epitaxy & metalorganic vapour phase epitaxy approaches - from growth to device
English
75 b
Delivery to Austria
Up to 30 days for returns
Customers also purchased
/
Paperback
13.59
€
With a direct bandgap tunable in the ultraviolet (3.42 eV) to near-infrared (0.65 eV) spectral range, InGaN is a promising semiconductor for high-efficiency photovoltaic devices to be integrated with the already existing technologies, III-V and Silicon. InGaN solar cells are currently fabricated on sapphire using metalorganic vapour phase epitaxy (MOVPE). However, their present limitations should be overcome: cost per unit of area has to be reduced using for example silicon substrates, indium incorporation should be increased to fit to the solar spectrum, and nitrogen polarity might be desirable to improve the carrier collection in In-rich nanostructured active regions. Nowadays, the plasma-assisted molecular beam epitaxy (PA-MBE) technique allows the larger In-incorporation in active layers and provides a good solution to demonstrate the proof-of-concept of all-InGaN solar cells. Last developments on the state-of-the-art of InGaN solar cells based on high-In content InGaN junctions grown by PA-MBE and InGaN/GaN multiple-quantum well structures grown by MOVPE are presented from the growth, material properties, device design and performance point of view.
About the book
English
Give this book today
It's easy
1 Add to cart and choose Deliver as present at the checkout 2 We'll send you a voucher 3 The book will arrive at the recipient's addressYou might also be interested in
/
Paperback
13.29
€
/
Paperback
10.29
€
/
Hardback
27.89
€
/
Paperback
21.99
€
/
Paperback
44.59
€
/
Hardback
214.29
€
Hi! I'm Libroamiko, your book advisor.
How can I help you?