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High power ultra-short pulse quantum-dot lasers
Recent developments of novel multi-section semiconductor lasers based on quantum-dot material
English
639 b
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In this book, novel multi-section laser diodes based on quantum-dot material are designed and investigated which exhibit a number of advantages such as low threshold current density; temperature-insensitivity and suppress carrier diffusion due to discrete nature of density of state of quantum-dots. The spectral versatility in the range of 1.1 m 1.3 m wavelengths is demonstrated through novel mode-locking regimes such as dual-wavelength mode-locking, wavelength bistability and broad tunability. Moreover, broad pulse repetition rate tuning using an external cavity configuration is presented. A high peak power of 17.7 W was generated from the quantum-dot laser with the tapered geometry of the gain section of the laser has led to successful application of such device for two-photon imaging. The improved optical parameters of the tapered laser enable to achieve nonlinear images of fluorescent beads. Thus it is for the first time that quantum-dot based compact monolithic device enables to image biological samples using two-photon microscopy imaging technique.
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