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Ferroelectric Random Access Memories

Name: Ferroelectric Random Access Memories
Brand: Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
SKU: 01562920
Price: 349.89 EUR
Availability: InStock
Author: Hiroshi Ishiwara
ISBN: 9783540407188

Fundamentals and Applications

Hiroshi Ishiwara

Masanori Okuyama

Yoshihiro Arimoto

Language

English

Book Hardback

Libristo code: 01562920

Publishers Springer-Verlag Berlin and Heidelberg GmbH & Co. KG, April 2004

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which includ... Full description

Libristo code: 01562920

856 b

349.89 € VAT included

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In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also helps specialists to understand FeRAMs more deeply.