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Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
Language
English
English
Book
Hardback
Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the...
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Libristo code: 22569086
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227 b
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Abstract: This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The
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About the book
Full name
Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
Author
MUHAMMED SHIBIB
Language
English
English
Binding
Book - Hardback
Date of issue
2019
Number of pages
206
EAN
9780530008134
ISBN
0530008130
Libristo code
22569086
Publishers
Dissertation Discovery Company
Weight
767
Dimensions
216 x 279 x 13
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