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Device Performance and Reliability in SOI MOSFET

Name: Device Performance and Reliability in SOI MOSFET
Brand: LAP Lambert Academic Publishing
SKU: 06921086
Price: 49.99 EUR
Availability: InStock
Author: Franklin Duan
ISBN: 9783659186172

Studies on Channel Coupling and Floating Body Effects in SOI

Franklin Duan

Language

English

Book Paperback

Libristo code: 06921086

Publishers LAP Lambert Academic Publishing, November 2011

SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high spee... Full description

Libristo code: 06921086

122 b

49.99 € VAT included

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SOI MOSFET is one of the promising options for the future VLSI market due to its low power/high speed character and simplified technology with increased packing density. Yet some problems in device physics must be fully understood before SOI is implemented in industry. In this thesis, optimized technology directions to balance the tradeoff between Performance & Reliability in SOI MOSFET are suggested. 1. Extensive study on the opposite-channel-based injection (OCBI) by manipulating these two gates is carried out by copious PISCES simulations. 2. the channel coupling effect was extensively carried out; both on electric field and impact ionization by numerical simulation. 3. the width effect of floating body effect was analyzed by a two-dimensional simulation which mimics its three dimensional features. 4. a new FD SOI MOSFET structure is proposed, which holds the drawbacks of low channel mobility in the inversion mode and poor latch-up voltage in the accumulation mode. 5. the compatibility of LDD technology to SOI was studied.